Chapitre D'ouvrage Année : 2026

A Review on Analytical and Electrical Modeling of the MOSFET Transistor

Résumé

Power semiconductor MOSFET and other MOS-controlled devices benefit from material and technology improvements to respond to high-level power features, high voltage, high current density, short switching times, and thermal constants, which optimize energy efficiency. These enhanced characteristics induce more electromagnetic noises and temperature-management constraints for the deployment of this technology. We describe synthetically modeling theory and technic, from basic-to-advanced, to derive predictive simulations for the power MOSFET challenging issues. 1. Analytical and electrical circuit model of the MOSFET elementary cell at semiconductor level, time-domain simulation. 2. Distributed and propagative model, including device packaging and power-printed circuit board (PPCB) PEEC and 3D model levels, signal integrity simulation, common mode emission simulation, and radiated field simulation. 3. Electro-thermal model with thermal propagative network model coupled with electrical model at circuit level, time multi-domain simulation. Case studies on Power PCB with MOSFET Si et SiC illustrate modeling procedures.

Dates et versions

hal-05526642 , version 1 (25-02-2026)

Identifiants

Citer

Jean-Marc Dienot. A Review on Analytical and Electrical Modeling of the MOSFET Transistor. IntechOpen. Field-Effect Transistors - Fundamentals, Technologies, and Future Innovations, 2026, ⟨10.5772/intechopen.1014747⟩. ⟨hal-05526642⟩
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